The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jan. 28, 2010
Tomohiro Murata, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Tsuyoshi Tanaka, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tomohiro Murata, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Tsuyoshi Tanaka, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.