The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jan. 22, 2005
Applicants:
Philippe Meunier-beillard, Kortenberg, BE;
Petrus Magnee, Malden, NL;
Inventors:
Philippe Meunier-Beillard, Kortenberg, BE;
Petrus Magnee, Malden, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
Fabrication of a mono-crystalline emitter using a combination of selective and differential growth modes. The steps include providing a trench () formed on a silicon substrate () having opposed silicon oxide side walls (); selectively growing a highly doped mono-crystalline layer () on the silicon substrate in the trench; and non-selectively growing a silicon layer () over the trench in order to form an amorphous polysilicon layer over the silicon oxide sidewalls.