The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
May. 15, 2007
Mingwei Xu, South Portland, ME (US);
Steven J. Adler, Cape Elizabeth, ME (US);
Mingwei Xu, South Portland, ME (US);
Steven J. Adler, Cape Elizabeth, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A system and method are disclosed for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitter. An active region of a transistor is formed and a silicon nitride sacrificial emitter is formed above the active region of the transistor. Then a physical vapor deposition oxide layer is deposited over the silicon nitride sacrificial emitter using a physical vapor deposition process. The physical vapor deposition oxide layer is then etched away from the side walls of the sacrificial emitter. The sacrificial emitter is then etched away to form an emitter window. Then a polysilicon emitter structure is formed in the emitter window. The self aligned bipolar transistor architecture of the invention is compatible with BiCMOS technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile