The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jun. 27, 2008
Yi MA, Santa Clara, CA (US);
Shreyas Kher, Campbell, CA (US);
Khaled Ahmed, Anaheim, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Electronic devices and methods for forming electronic devices that allow for a reduction in device dimensions while also maintaining or reducing leakage current for non-volatile memory devices are provided. In one embodiment, a method of fabricating a non-volatile memory device is provided. The method comprises depositing a floating gate polysilicon layer on a substrate, forming a silicon oxide layer on the floating gate polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a high-k dielectric material layer on the first silicon oxynitride layer, depositing a second silicon oxynitride on the high-k dielectric material, and forming a control gate polysilicon layer on the second silicon oxynitride layer. In one embodiment, the high-k dielectric material layer comprises hafnium silicon oxynitride.