The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2011

Filed:

Feb. 06, 2009
Applicants:

Young-tae Kim, Suwon-si, KR;

Young-nam Hwang, Gyeonggi-do, KR;

Tai-kyung Kim, Gyeonggi-do, KR;

Won-young Chung, Anywang-si, KR;

Keun-ho Lee, Seoul, KR;

Inventors:

Young-Tae Kim, Suwon-si, KR;

Young-Nam Hwang, Gyeonggi-do, KR;

Tai-Kyung Kim, Gyeonggi-do, KR;

Won-Young Chung, Anywang-si, KR;

Keun-Ho Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.


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