The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Apr. 14, 2006
Yuji Shinohara, Suwa, JP;
Yuji Shinohara, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The object of the present invention is to provide a semiconductor layer formation material from which a semiconductor layer having a high carrier transport ability can be made, a method of forming a semiconductor element having a semiconductor layer having a high carrier transport ability, a semiconductor element formed by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability. The semiconductor layer formation material includes a semiconductor material, porous particles each having a number of pores, and a dispersion medium, wherein the semiconductor material is existed in the semiconductor layer formation material in such a state that at least a part of the semiconductor material is filled in the pores of the porous particles. According to the semiconductor layer formation material it is possible to form a semiconductor layer having a high carrier transport ability can be made.