The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Feb. 18, 2009
Applicants:

Norihiro Iwai, Tokyo, JP;

Keishi Takaki, Tokyo, JP;

Suguru Imai, Tokyo, JP;

Inventors:

Norihiro Iwai, Tokyo, JP;

Keishi Takaki, Tokyo, JP;

Suguru Imai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/10 (2006.01); H01S 5/00 (2006.01); H01S 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrateis comprised of: a semiconductor lower DBR mirror, a cladding layer, a n-type contact layer, an active layer, an electric current constricting layer, a p-type cladding layer, a p-type contact layer, a phase adjusting layerand a dielectric upper DBR mirror The surface emitting laser should be formed such that the diameter X (μm) of the opening diameter of the previously mentioned electric current constricting layerand diameter Y (μm) of the phase adjusting layer satisfy the following relation: X+1.9λ≦Y≦X+5.0λ (wherein λ indicates oscillation wavelength (μm) of the surface emitting laser).


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