The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Apr. 09, 2008
Applicant:

Shunya Nagata, Kanagawa, JP;

Inventor:

Shunya Nagata, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a semiconductor memory device in which a cell is connected to word lines of at least first and second ports, and control of timing of activation of the word lines of the first and second ports is performed based upon first and second clock signals, respectively, comprising first and second test control signals in correspondence with the first and second clock signals that control the respective timings of activation of the word lines of the first and second ports. With regard to the cell with the first and second ports being selected, when the first test control signal is in an activated state and the second test control signal is in a deactivated state, control is exercised so as to mask the second clock signal and, responsive to the first clock signal, activate the first and second word lines simultaneously. When the second test control signal is in an activated state and the first test control signal is in a deactivated state, control is exercised so as to mask the first clock signal and, responsive to the second clock signal, activate the first and second word lines.


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