The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Dec. 08, 2008
Hiroshi Iwasaki, Osaka, JP;
Hiroshi Iwasaki, Osaka, JP;
Empire Technology Development LLC, Wilmington, DE (US);
Glitter Technology LLP, Singapore, SG;
Abstract
The disclosure of this application enhances the data writing speed of an electrically erasable and writable semiconductor memory. In a semiconductor storage device of this application, at a time of writing data, when a positive voltage lower than a voltage at control gateis applied to potential control gateformed inside tunnel oxide filmbetween p channelof a transistor and floating gate, a potential barrier between p channelof the transistor and floating gateis lowered, and a time required for storing an electron in floating gateis reduced. After data is stored, when 0 V or a negative voltage is applied to the potential control gate, a potential barrier for an electron moving from the floating gate to the channel of the transistor increases, thereby preventing erasure of data.