The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Sep. 07, 2007
Kazumasa Nishimura, Niigata-ken, JP;
Masamichi Saito, Niigata-ken, JP;
Yosuke Ide, Niigata-ken, JP;
Masahiko Ishizone, Niigata-ken, JP;
Ryo Nakabayashi, Niigata-ken, JP;
Naoya Hasegawa, Niigata-ken, JP;
Kazumasa Nishimura, Niigata-ken, JP;
Masamichi Saito, Niigata-ken, JP;
Yosuke Ide, Niigata-ken, JP;
Masahiko Ishizone, Niigata-ken, JP;
Ryo Nakabayashi, Niigata-ken, JP;
Naoya Hasegawa, Niigata-ken, JP;
Alps Electric Co., Ltd., Tokyo, JP;
Abstract
A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of CoFehaving a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.