The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Oct. 31, 2007
Applicants:

Satoshi Sakai, Yokohama, JP;

Yoichiro Tsumura, Hiroshima, JP;

Masami Iida, Nagasaki, JP;

Kohei Kawazoe, Nagasaki, JP;

Inventors:

Satoshi Sakai, Yokohama, JP;

Yoichiro Tsumura, Hiroshima, JP;

Masami Iida, Nagasaki, JP;

Kohei Kawazoe, Nagasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 3/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.


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