The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7906800 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 15, 2011

Filed:

Apr. 24, 2009
Applicant:

Masaya Sumita, Hyogo, JP;

Inventor:

Masaya Sumita, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.


Find Patent Forward Citations

Sumita, Masaya. (2011). Semiconductor integrated circuit (U.S. Patent No. 7906800). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7906800

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