The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Mar. 24, 2009
Seung-pil Ko, Suwon-si, KR;
Jae-hee OH, Seongnam-si, KR;
Jung-hoon Park, Seoul, KR;
Yoon-jong Song, Seoul, KR;
Jae-hyun Park, Yongin-si, KR;
Dong-won Lim, Seoul, KR;
Seung-Pil Ko, Suwon-si, KR;
Jae-Hee Oh, Seongnam-si, KR;
Jung-Hoon Park, Seoul, KR;
Yoon-Jong Song, Seoul, KR;
Jae-Hyun Park, Yongin-si, KR;
Dong-Won Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes an insulating layer on a substrate, a first electrode in the insulating layer having a first upper surface and a second upper surface, a second electrode in the insulating layer spaced apart from the first electrode by a first distance and having a third upper surface and a fourth upper surface, the third upper surface being disposed at a substantially same level as the first upper surface, and the fourth upper surface being disposed at a substantially same level as the second upper surface, a first phase change material pattern covering a part of the first upper surface of the first electrode, and a second phase change material pattern covering a part of the third upper surface of the second electrode, wherein an interface region between the second phase change pattern and the second electrode is spaced apart from an interface region between the first phase change pattern and the first electrode by a second distance greater than the first distance.