The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7906436 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 15, 2011

Filed:

Jan. 16, 2009
Applicant:

Kouichi Konishi, Kanagawa, JP;

Inventor:

Kouichi Konishi, Kanagawa, JP;

Assignee:

RENESAS Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device which includes step of forming a lower resist film over an insulating interlayer; forming a first opening having a circular geometry in a plan view, and second to fifth openings arranged respectively on four sides of the first opening, in the lower resist film; and etching the film-to-be-etched while using the lower resist film as a mask, wherein in the step of etching the film-to-be-etched, a hardened layer is formed in a region of the lower resist film fallen between the first opening and each of the second to fifth openings, and the film-to-be-etched is etched while using the hardened layers as a mask, so as to form a contact hole having a rectangular geometry in a plan view in the film-to-be-etched at a position correspondent to the first opening of the lower resist film.


Find Patent Forward Citations

Konishi, Kouichi. (2011). Method of manufacturing semiconductor device, and semiconductor device (U.S. Patent No. 7906436). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7906436

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