The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Aug. 12, 2009
Junichi Hashimoto, Kanagawa-ken, JP;
Mitsuhiro Omura, Kawasaki, JP;
Yasuyoshi Hyodo, Tokyo, JP;
Takamichi Tsuchiya, Yokkaichi, JP;
Junichi Hashimoto, Kanagawa-ken, JP;
Mitsuhiro Omura, Kawasaki, JP;
Yasuyoshi Hyodo, Tokyo, JP;
Takamichi Tsuchiya, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes: depositing a first insulating film and a second insulating film on a substrate sequentially and forming a pattern on the second insulating film; forming a silicon film on the pattern; forming a sidewall made of the silicon film by processing the silicon film until a part of the second insulating film is exposed by use of etch-back; removing the second insulating film; and performing dry etching by use of a fluorocarbon-based gas, to process the first insulating film by using the sidewall as a mask. The processing of the first insulating film includes applying on the substrate a self-bias voltage Vdc that satisfies a relational expression of Vdc<46x−890, where a film thickness of the silicon film that constitutes the sidewall is x nm (19.5≦x≦22.1).