The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Oct. 12, 2007
Applicants:

Masanobu Tsuchitani, Kanagawa-ken, JP;

Hideki Nozaki, Kanagawa-ken, JP;

Motoshige Kobayashi, Kanagawa-ken, JP;

Inventors:

Masanobu Tsuchitani, Kanagawa-ken, JP;

Hideki Nozaki, Kanagawa-ken, JP;

Motoshige Kobayashi, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device from a semiconductor wafer having a first major surface, a recess provided inside a periphery on opposite side of the first major surface and surrounded by the periphery, and a second major surface provided at bottom of the recess is provided. The method comprises: fitting into the recess a doping mask having selectively formed openings to selectively cover the second major surface with the doping mask; and selectively introducing dopant into the second major surface.


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