The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Jan. 12, 2006
Johannes Jtm Donkers, Valkenswaard, NL;
Wibo D. Van Noort, Wappingers Falls, NY (US);
Philippe Meunier-beillard, Kortenberg, BE;
Sebastien Nuttinck, Heverlee, BE;
Erwin Hujzen, Blanden, BE;
Francois Neuilly, Colomby-Sur-Thaon, FR;
Johannes JTM Donkers, Valkenswaard, NL;
Wibo D. Van Noort, Wappingers Falls, NY (US);
Philippe Meunier-Beillard, Kortenberg, BE;
Sebastien Nuttinck, Heverlee, BE;
Erwin Hujzen, Blanden, BE;
Francois Neuilly, Colomby-Sur-Thaon, FR;
NXP B.V., Eindhoven, NL;
Abstract
Consistent with an example embodiment, there is a bipolar transistor with a reduced collector series resistance integrated in a trench of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region manufactured in one fabrication step, therefore having a shorter conductive path with a reduced collector series resistance, improving the high frequency performance of the bipolar transistor. The bipolar transistor further includes a base region with a first part on a selected portion of the collector region (), which is on the bottom of the trench, and an emitter region on a selected portion of the first part of the base region. A base contact electrically contacts the base region on a second part of the base region, which is on an insulating region. The collector region is electrically contacted on top of a protrusion with a collector contact.