The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
May. 15, 2006
Junko Kobayashi, Sunnyvale, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Anneli Munkholm, Mountain View, CA (US);
Junko Kobayashi, Sunnyvale, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Anneli Munkholm, Mountain View, CA (US);
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Abstract
A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.