The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Mar. 30, 2010
Carolyn R. Ellinger, Rochester, NY (US);
Keith B. Kahen, Rochester, NY (US);
Carolyn R. Ellinger, Rochester, NY (US);
Keith B. Kahen, Rochester, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
Method of making a light emitting semiconductor nanowire device includes providing a plurality of spaced light emitting semiconductor nanowires on a growth substrate; applying a dielectric material disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode over the top surface in electrical contact with the nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded nanowires; depositing a second electrode on the bottom surface of the nanowires so that it is in electrical contact with the nanowires; and wherein either the first or second electrode is transparent to permit light to be transmitted from the light emitting semiconductor nanowires through the transparent electrode.