The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Nov. 21, 2007
Applicants:

Gerard M. Schmid, Austin, TX (US);

Douglas J. Resnick, Austin, TX (US);

Michael N. Miller, Austin, TX (US);

Inventors:

Gerard M. Schmid, Austin, TX (US);

Douglas J. Resnick, Austin, TX (US);

Michael N. Miller, Austin, TX (US);

Assignee:

Molecular Imprints, Inc., Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/09 (2006.01); G03F 7/26 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask.


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