The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Aug. 16, 2005
Jong Jin Park, Guri-si, KR;
Hyun Jung Park, Seoul, KR;
Bon Won Koo, Suwon-si, KR;
Sang Yoon Lee, Seoul, KR;
Lyong Sun Pu, Suwon-si, KR;
Kakimoto Masaaki, Tokyo, JP;
Jong Jin Park, Guri-si, KR;
Hyun Jung Park, Seoul, KR;
Bon Won Koo, Suwon-si, KR;
Sang Yoon Lee, Seoul, KR;
Lyong Sun Pu, Suwon-si, KR;
Kakimoto Masaaki, Tokyo, JP;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.