The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Aug. 23, 2006
Applicants:

Frank Y. Xu, Round Rock, TX (US);

Michael N. Miller, Austin, TX (US);

Michael P. C. Watts, Austin, TX (US);

Inventors:

Frank Y. Xu, Round Rock, TX (US);

Michael N. Miller, Austin, TX (US);

Michael P. C. Watts, Austin, TX (US);

Assignee:

Molecular Imprints, Inc., Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/02 (2006.01); C08L 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.


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