The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Jun. 04, 2007
Fengyan Zhang, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Wei Gao, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Wei Gao, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
An iridium oxide (IrOx) nanowire neural sensor array and associated fabrication method are provided. The method provides a substrate with a conductive layer overlying the substrate, and a dielectric layer overlying the conductive layer. The substrate can be a material such as Si, SiO, quartz, glass, or polyimide, and the conductive layer is a material such as ITO, SnO, ZnO, TiO, doped ITO, doped SnO, doped ZnO, doped TiO, TiN, TaN, Au, Pt, or Ir. The dielectric layer is selectively wet etched, forming contact holes with sloped walls in the dielectric layer and exposing regions of the conductive layer. IrOx nanowire neural interfaces are grown from the exposed regions of the conductive layer. The IrOx nanowire neural interfaces each have a cross-section in a range of 0.5 to 10 micrometers, and may be shaped as a circle, rectangle, or oval.