The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Dec. 28, 2007
Jong Hyun Wang, Cheongju-si, KR;
Duck Ju Kim, Icheon-si, KR;
Seong Hun Park, Gunsan-si, KR;
Chang Won Yang, Icheon-si, KR;
Jong Hyun Wang, Cheongju-si, KR;
Duck Ju Kim, Icheon-si, KR;
Seong Hun Park, Gunsan-si, KR;
Chang Won Yang, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A memory device has memory cells that are Multi-Level Cells (MLCs). A memory cell array includes a plurality of cell strings, each string provided between a bit line and a common source line, wherein a positive voltage is applied to the common source line at the time of program verification. A page buffer is configured to program the MLCs, read memory cells, and perform program verification. This program verification is performed by sequentially increasing a voltage level of a bit line select signal until the bit line select signal reaches to a voltage that is sufficient to verify a programmed state of a selected cell in the memory cell array.