The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Mar. 03, 2008
Ching-te Chuang, South Salem, NY (US);
Jae-joon Kim, Yorktown Heights, NY (US);
Keunwoo Kim, Somers, NY (US);
Ching-Te Chuang, South Salem, NY (US);
Jae-Joon Kim, Yorktown Heights, NY (US);
Keunwoo Kim, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Asymmetrical SRAM cells are improved by providing one or more of improved read stability and improved write performance and margin. A first inverter and a second inverter are cross-coupled and configured for selective coupling to true and complementary bit lines under control of read and write word lines. The first inverter is formed by a first, n-type, FET (NFET) and a second, p-type, FET (PFET). Process and/or technology approaches can be employed to adjust the relative strength of the FETS to obtain, for example, read margin, write margin, and/or write performance improvements.