The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Feb. 25, 2010
Kaori Tai, Kanagawa, JP;
Masanori Tsukamoto, Kanagawa, JP;
Masashi Nakata, Kanagawa, JP;
Itaru Oshiyama, Kanagawa, JP;
Kaori Tai, Kanagawa, JP;
Masanori Tsukamoto, Kanagawa, JP;
Masashi Nakata, Kanagawa, JP;
Itaru Oshiyama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer.