The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
May. 19, 2008
Ho Kyun Ahn, Daejeon, KR;
Jong Won Lim, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Hong Gu Ji, Daejeon, KR;
Woo Jin Chang, Daejeon, KR;
Hea Cheon Kim, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Jong Won Lim, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Hong Gu Ji, Daejeon, KR;
Woo Jin Chang, Daejeon, KR;
Hea Cheon Kim, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.