The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2011

Filed:

Aug. 18, 2008
Applicants:

Cheng-ta Kuo, Hsinchu, TW;

Yu-pin Hsu, Hsinchu, TW;

Chun-kai Wang, Hsinchu, TW;

Jui-yi Chu, Hsinchu, TW;

Tsung-kuang Chen, Hsinchu, TW;

Inventors:

Cheng-Ta Kuo, Hsinchu, TW;

Yu-Pin Hsu, Hsinchu, TW;

Chun-Kai Wang, Hsinchu, TW;

Jui-Yi Chu, Hsinchu, TW;

Tsung-Kuang Chen, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.


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