The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Dec. 01, 2008
Tetsuya Hayashi, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Nissan Motor Co., Ltd., Yokohama-shi, JP;
Abstract
A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a result, an interrupting performance can be improved at the time of interruption, and at the same time, the generation of the hot spot where in a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thereby ensuring a long-term reliability. Further, when the semiconductor chip is used in an L load circuit or the like, for example, at the time of conduction or during a transient response time to the interrupted state, in an index such as a short resistant load amount and an avalanche resistant amount, which are indexes of a breakdown tolerance when overcurrent or overvoltage occurs, the current concentration on a specific portion can be prevented, and thus, these breakdown tolerances can also be improved.