The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
May. 26, 2010
Sun Woon Kim, Seoul, KR;
Je Won Kim, Kyungki-do, KR;
Sang Won Kang, Kyungki-do, KR;
Keun Man Song, Seoul, KR;
Bang Won OH, Kyungki-do, KR;
Sun Woon Kim, Seoul, KR;
Je Won Kim, Kyungki-do, KR;
Sang Won Kang, Kyungki-do, KR;
Keun Man Song, Seoul, KR;
Bang Won Oh, Kyungki-do, KR;
Samsung LED Co., Ltd, Gyunggi-Do, KR;
Abstract
The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.