The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Oct. 11, 2008
Pooran Chandra Joshi, Vancouver, WA (US);
Jiandong Huang, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
Pooran Chandra Joshi, Vancouver, WA (US);
Jiandong Huang, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiONfilm for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiONfilm, where (X+Y<2 and Y>0), overlying the bottom electrode. The Si nanoparticle embedded SiONfilm is annealed. The annealed Si nanoparticle embedded SiONfilm has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.