The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Sep. 19, 2006
Yu-hsuan Kuo, National Taiwan, TW;
James S. Harris, Jr., Stanford, CA (US);
Yu-Hsuan Kuo, National Taiwan, TW;
James S. Harris, Jr., Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.