The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Nov. 14, 2008
Ferencz S. Denes, Madison, WI (US);
Sorin O. Manolache, Madison, WI (US);
Luis Emilio Cruz-barba, Guadalajara, MX;
Max G. Lagally, Madison, WI (US);
Ferencz S. Denes, Madison, WI (US);
Sorin O. Manolache, Madison, WI (US);
Luis Emilio Cruz-Barba, Guadalajara, MX;
Max G. Lagally, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface. In a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content. In some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.