The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Jul. 20, 2006
Applicant:

Avner Elia, Ramat Ishai, IL;

Inventor:

Avner Elia, Ramat Ishai, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 11/12 (2006.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is directed to a method for reducing the current consumption and increasing the efficiency of an RF power amplifier (PA), while maintaining the output power. The desired output power of the PA is determined and for each level of the desired output power, the load that is connected to the output stage of the PA is tuned to essentially match the output impedance of the output stage to provide maximal gain. By doing so, the dynamic RF load line has a slope that causes it to intersect with the drain-source (or emitter-collector, in case of a bipolar transistor) voltage, across the output stage, at a value that corresponds to the voltage swing required to provide the desired output power.


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