The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Feb. 27, 2008
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Kunihiko Tasai, Kanagawa, JP;
Koshi Tamamura, Tokyo, JP;
Hiroshi Nakajima, Kanagawa, JP;
Hitoshi Nakamura, Hachioji, JP;
Sumiko Fujisaki, Hachioji, JP;
Takeshi Kikawa, Kodaira, JP;
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Kunihiko Tasai, Kanagawa, JP;
Koshi Tamamura, Tokyo, JP;
Hiroshi Nakajima, Kanagawa, JP;
Hitoshi Nakamura, Hachioji, JP;
Sumiko Fujisaki, Hachioji, JP;
Takeshi Kikawa, Kodaira, JP;
Abstract
An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.