The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jun. 29, 2009
Kwang Ho Baek, Gyeonggi-do, KR;
Sam Kyu Won, Gyeonggi-do, KR;
Kwang Ho Baek, Gyeonggi-do, KR;
Sam Kyu Won, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method of reading a nonvolatile memory device may include, after an nerase operation is performed, reading dummy cells on which a program operation has been performed based on a first read voltage, where n is an integer greater than zero, counting a number of dummy cells that are read as having a threshold voltage lower than the first read voltage, when the number is a critical value or more, resetting a read voltage, and performing, based on the reset read voltage, a read operation on memory cells that belong to the same memory cell block as the dummy cells and on which a program operation has been performed on the memory cells after the nerase operation has been performed.