The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Nov. 13, 2008
Lucian Prejbeanu, Sassenage, FR;
Cécile Maunoury, Grenoble, FR;
Bernard Dieny, Lans en Vercors, FR;
Clarisse Ducruet, Grenoble, FR;
Ricardo Sousa, Grenoble, FR;
Lucian Prejbeanu, Sassenage, FR;
Cécile Maunoury, Grenoble, FR;
Bernard Dieny, Lans en Vercors, FR;
Clarisse Ducruet, Grenoble, FR;
Ricardo Sousa, Grenoble, FR;
Commissariat A l' Energie Atomique, Paris, FR;
Abstract
A magnetic element with thermally-assisted writing using a field or spin transfer provided, including a magnetic reference layer referred to as the 'trapped layer,' the magnetization of which is in a fixed direction, and a magnetic storage layer called the 'free layer' having a variable magnetization direction and consisting of a layer made of a ferromagnetic material with magnetization in the plane of the layer and magnetically coupled to a magnetization-trapping layer made of an antiferromagnetic material. A semiconductor or an insulating layer with confined-current-paths is sandwiched between the reference layer and the storage layer. At least one bilayer, consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer, is provided in the storage layer between ferromagnetic layer, which is in contact with the semiconductor or insulating layer with confined-current-paths, and antiferromagnetic layer.