The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Jul. 28, 2009
Applicants:

Toshikazu Mukai, Kyoto, JP;

Masahiro Asada, Tokyo, JP;

Safumi Suzuki, Tokyo, JP;

Kenta Urayama, Tokyo, JP;

Inventors:

Toshikazu Mukai, Kyoto, JP;

Masahiro Asada, Tokyo, JP;

Safumi Suzuki, Tokyo, JP;

Kenta Urayama, Tokyo, JP;

Assignee:

Rohm Co., Ltd., Kyoto-fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 7/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.


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