The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Nov. 25, 2004
Applicants:

Koichi Aizawa, Neyagawa, JP;

Tsutomu Ichihara, Hirakata, JP;

Takuya Komoda, Sanda, JP;

Jyunji Ikeda, Toyonaka, JP;

Toru Baba, Osaka, JP;

Inventors:

Koichi Aizawa, Neyagawa, JP;

Tsutomu Ichihara, Hirakata, JP;

Takuya Komoda, Sanda, JP;

Jyunji Ikeda, Toyonaka, JP;

Toru Baba, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.


Find Patent Forward Citations

Loading…