The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Feb. 24, 2006
Applicant:
Yoshimi Egawa, Tokyo, JP;
Inventor:
Yoshimi Egawa, Tokyo, JP;
Assignee:
Oki Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A through electrode extends through a silicon substrate from the upper surface to the lower surface of the substrate to accomplish electrical conduction between the upper and lower surfaces of the substrate. The through electrode includes a plurality of slender through holes formed in a through electrode forming area of the silicon substrate. The slender through holes extend through the silicon substrate from the upper surface to the lower surface of the silicon substrate. The through electrode also includes a plurality of conductive bodies fitted in the slender through holes. The conductive bodies are electrically connected with each other.