The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7898036 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 01, 2011

Filed:

Jul. 22, 2008
Applicant:

Hidenobu Fukutome, Kawasaki, JP;

Inventor:

Hidenobu Fukutome, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate; a gate electrode formed on the semiconductor substrate; source and drain extension regions formed in the semiconductor substrate on a first and a second side corresponding to a first sidewall surface and a second sidewall surface, respectively, of the gate electrode; a first piezoelectric material pattern formed on the semiconductor substrate continuously covering the first sidewall surface of the gate electrode from the first side of the gate electrode; a second piezoelectric material pattern formed on the semiconductor substrate continuously covering the second sidewall surface of the gate electrode from the second side of the gate electrode; and source and drain regions formed in the semiconductor substrate outside the source extension region and the drain extension, respectively.


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Fukutome, Hidenobu. (2011). Semiconductor device and process for manufacturing the same (U.S. Patent No. 7898036). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7898036

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