The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jun. 16, 2006
Applicants:
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Inventors:
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Assignees:
Tohoku University, Miyagi, JP;
Foundation for Advancement of International Science, Ibaraki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.