The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Aug. 05, 2005
Martin Knaipp, Unterpremstätten, AT;
Jong Mun Park, Graz, AT;
Martin Knaipp, Unterpremstätten, AT;
Jong Mun Park, Graz, AT;
austriamicrosystems AG, Underpremstätten, AU;
Abstract
An n-conductively doped source region () in a deep p-conducting well (DP), a channel region (), a drift region () formed by a counterdoping region (), preferably below a gate field plate () insulated by a gate field oxide (), and an n-conductively doped drain region () arranged in a deep n-conducting well (DN) are arranged in this order at a top side of a substrate (). A lateral junction () between the deep p-conducting well (DP) and the deep n-conducting well (DN) is present in the drift path () in the vicinity of the drain region () so as to avoid a high voltage drop in the channel region () during the operation of the transistor and to achieve a high threshold voltage and also a high breakdown voltage between source and drain.