The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7898025 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 01, 2011

Filed:

Sep. 03, 2009
Applicant:

Young-kyun Jung, Kyoungki-do, KR;

Inventor:

Young-Kyun Jung, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Ichon-Shi, Kyoungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device having a recess gate includes a semiconductor substrate having a recess, a conductive pattern for a gate electrode filled into the recess, and having an extension portion protruding higher than a surface of the semiconductor substrate, an epitaxial semiconductor layer having a top surface disposed over the semiconductor substrate, and a gate insulating layer disposed between the epitaxial semiconductor layer and the conductive pattern, and between the semiconductor substrate and the conductive pattern. Further, a method of fabricating the same is disclosed.


Find Patent Forward Citations

Jung, Young-Kyun. (2011). Semiconductor device having recess gate (U.S. Patent No. 7898025). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7898025

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…