The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Dec. 03, 2008
Applicants:

Justin Richardson, Edinburgh, GB;

Lindsay Grant, Edinburgh, GB;

Marek Gersbach, Lausanne, CH;

Edoardo Charbon, CD Delft, NL;

Cristiano Niclass, Clarens, CH;

Robert Henderson, Edinburgh, GB;

Inventors:

Justin Richardson, Edinburgh, GB;

Lindsay Grant, Edinburgh, GB;

Marek Gersbach, Lausanne, CH;

Edoardo Charbon, CD Delft, NL;

Cristiano Niclass, Clarens, CH;

Robert Henderson, Edinburgh, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.


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