The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Feb. 18, 2003
Hiroshi Kawazoe, Kanagawa, JP;
Satoshi Kobayashi, Tokyo, JP;
Yuki Tani, Tokyo, JP;
Hiroaki Yanagita, Tokyo, JP;
Hiroshi Kawazoe, Kanagawa, JP;
Satoshi Kobayashi, Tokyo, JP;
Yuki Tani, Tokyo, JP;
Hiroaki Yanagita, Tokyo, JP;
Hoya Corporation, Tokyo, JP;
Abstract
The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.