The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

May. 18, 2006
Applicants:

Dirk Wouters, Heverlee, BE;

Ludovic Goux, Hannut, BE;

Judith Lisoni, Our-Heverlee, BE;

Thomas Gille, Leuven, BE;

Inventors:

Dirk Wouters, Heverlee, BE;

Ludovic Goux, Hannut, BE;

Judith Lisoni, Our-Heverlee, BE;

Thomas Gille, Leuven, BE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions ('hot spot') than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.


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