The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jun. 25, 2010
Naotaka Tanaka, Kasumigaura, JP;
Kenji Kanemitsu, Hitachinaka, JP;
Takafumi Kikuchi, Kikuchi, JP;
Takashi Akazawa, Musashimurayama, JP;
Naotaka Tanaka, Kasumigaura, JP;
Kenji Kanemitsu, Hitachinaka, JP;
Takafumi Kikuchi, Kikuchi, JP;
Takashi Akazawa, Musashimurayama, JP;
Renesas Electronics Corp., Tokyo, JP;
Abstract
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.