The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Mar. 06, 2008
Daisuke Oshida, Kanagawa, JP;
Toshiyuki Takewaki, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Daisuke Oshida, Kanagawa, JP;
Toshiyuki Takewaki, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of the lower electrode to form a projection containing silicide by reacting the metal with the silicon in an island shape on the surface of the lower electrode. Then, a capacitor film is formed on the lower electrode and the projection, and an upper electrode is formed on the capacitor film.