The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jun. 16, 2006
Kenichi Kazama, Nagano, JP;
Tsunehiro Nakajima, Nagano, JP;
Koji Sasaki, Nagano, JP;
Akio Shimizu, Nagano, JP;
Takashi Hayashi, Nagano, JP;
Hiroki Wakimoto, Nagano, JP;
Kenichi Kazama, Nagano, JP;
Tsunehiro Nakajima, Nagano, JP;
Koji Sasaki, Nagano, JP;
Akio Shimizu, Nagano, JP;
Takashi Hayashi, Nagano, JP;
Hiroki Wakimoto, Nagano, JP;
Fuji Electric Systems Co., Ltd., Tokyo, JP;
Abstract
A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.